Tailoring of embedded dielectric alumina film in AlGaAs epilayer by selective thermal oxidation

Vertical optical confinement is a critical requirement for wide range of III-V photonic devices where Al 2 O 3 material the typical oxide used due to its low refractive index. This layer can be formed from oxidation AlAs in an epitaxial GaAs/AlAs/GaAs or AlGaAs/AlAs/GaAs stack, with advantage that top remains single-crystalline. The thick film required applications. In this article, we report processes developed fully convert AlO x films by analyzing both thin (100 nm) and (500 on GaAs (001) 2° miscut (111)A substrate. Systematic microscopic characterization performed demonstrate absence any delamination at interfaces evolution diffusive process microscopically characterized compared (µ-Raman) characterization. We selectivity respect active 0.18 Ga 0.82 As Finally, proposed method adopted create high index contrast between environment specific case crystal device, highlighting potential approach non-linear